Vacuum Flat-Panel Solar Blind Ultraviolet Detectors Using PIN-Structure Photocathodes Formed by ZnO Nanowires on NiO-Ga2O3

被引：0
|
作者：
Mo, Dunhan [1 ]
Zhang, Zhipeng [1 ]
Ou, Zhuoran [1 ]
She, Juncong [1 ]
Deng, Shaozhi [1 ]
Chen, Jun [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
来源：
2024 37TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, IVNC 2024 | 2024年
基金：
中国国家自然科学基金;
关键词：
Solar blind ultraviolet detectors; PIN photocathode; Field emission; Ga2O3; EBIPC;
D O I：
10.1109/IVNC63480.2024.10652393
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A vacuum cold cathode detector formed by a PIN-structure photocathode and a ZnS thin film is proposed to achieve highly sensitive solar blind ultraviolet detection. The PIN-structure photocathode was formed by ZnO nanowires grown on NiO-Ga2O3 heterojunction using a thermal oxidation technique. The electrons generated by internal photoelectric effect in PIN photocathode are accelerated in the vacuum gap and multiplied in the ZnS thin film by EBIPC effect, achieving a high ultraviolet detection responsivity.
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