0.08 fF, 0.72 nA dark current, 91% Quantum Efficiency, 38 Gb/s Nano-photodetector on a 45 nm CMOS Silicon-Photonic Platform

被引：0

作者：

Fu, Mingye ^{[1
]}

Yoo, S. J. Ben ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated a Germanium-on-Silicon photodetector utilizing an asymmetric-Fabry-Perot resonator with 0.08 fF capacitance. The measurements at 1315.5 nm show 0.72 nA (3.40 nA) dark current, 0.93 A/W (0.96 A/W) responsivity, 36 Gb/s (38 Gb/s) operation at -1V (-2V) bias. (c) 2023 The Author(s)

引用

页数：3