Analytical Transient Model of Field-Stop IGBT Accounting for Temperature Dependence

The field-stop (FS) insulated gate bipolar transistors (IGBTs) (FS IGBTs) become a mainstay in the IGBT market for medium and high-power applications nowadays. The wide application of FS IGBTs led to a great desire for fast and accurate simulation of the device. In this article, an analytical transient model is proposed for FS IGBT. Based on the improved understanding of the switching behavior of FS IGBT, complete analytical expressions of V-ce and I-c at switching transient are derived. The pivotal device characteristics depending on the junction temperature T-j1 of low-side IGBT and T-j2 of high-side IGBT are identified and modeled. To extract model parameters, experimental and datasheet-driven parameter extraction methods are proposed. Double-pulse tests are performed on 600 V and 1200 V-rated FS IGBTs under various test conditions. The simulated and experimental results are compared and good agreement is obtained.