Evaluation of a 1200 V Polarization Super Junction GaN Field-Effect Transistor in Cascode Configuration

被引：0

作者：

Sheikhan, Alireza ^{[1
]}

Narayanan, E. M. Sankara ^{[1
]}

Kawai, Hiroji ^{[2
]}

Yagi, Shuichi ^{[2
]}

Narui, Hironobu ^{[2
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, England

[2] POWDEC KK, 1-23-15 Wakagi Cho, Oyama, Tochigi 3230028, Japan

来源：

ELECTRONICS | 2025年 / 14卷 / 03期

关键词：

cascode; polarization super junction; 1200; V; GaN-FET; ENHANCEMENT; DESIGN;

D O I：

10.3390/electronics14030624

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaN HEMTs based on polarization super junction (PSJ) technology offer significant improvements in efficiency and power density over conventional silicon (Si) devices due to their excellent material characteristics, which enable fast switching edges and lower specific on-resistance. However, due to the presence of an uninterrupted channel between drain and source at zero gate bias, these devices have normally-on characteristics. In this paper, the performance of a 1200 V GaN FET utilizing PSJ technology in cascode configuration is reported. The device working principle, characteristics, and switching behavior are experimentally demonstrated. The results show that cascoded GaN FETs utilizing the PSJ concept are highly promising for power device applications.

引用

页数：12

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