Controllable Design of "Nested Doll" MoS2/V2O3 Heterostructures Promotes Polarization Effects for High-Efficiency Microwave Absorption

Special multilayer heterostructures and lattice modulation play a crucial role in the field of microwave absorption. Herein, a unique "nested doll" MoS2/V2O3 heterostructures are synthesized via crystal epitaxy growth and solvothermal strategy. The synchronized modulation of lattice spacing and interfacial vacancies in MoS2 nanosheets is achieved by adjusting the S-2(-) concentration. A high concentration of S-2(-) expands the MoS2 lattice spacing and increases interfacial vacancies, facilitating the precise modulation of the orderly arrangement of MoS2-V2O3-MoS2 layers and inducing interfacial polarization. By increasing the number of V2O3-MoS2 layers from two to five, a built-in electric field is formed, which enhances charge transfer from the MoS2 surface to the V2O3 core. The introduction of vacancies reduces the MoS2 band gap, lowers the electron hopping barrier, increases dielectric loss, and ultimately synergistically improves microwave absorption (MA). As a result, the "nested doll" MoS2/V2O3-5 (5 layers) microspheres exhibit superior MA behavior compared to other MoS2/V2O3 absorbers. The reflection loss reaches -69.65 dB and the effective absorption bandwidth achieves 7.68 GHz. These discoveries have contributed to the further development of multilayer heterostructures and improved advances in the theory of energy band structures and electromagnetic properties.