A critical review of recent advances, prospects, and challenges of MoS2/Si heterostructure based photodetectors

Over the last decade, the first two-dimensional transition metal dichalcogenide, MoS2, has been extensively investigated for developing efficient photodetectors due to its tunable bandgap, strong light interaction, high carrier mobility, and large optical transparency. Recently, it has also been integrated with different dimensional materials to improve its optoelectronic behavior. Among the possible heterostructures, MoS2/Si heterojunctionbased photodetectors have grabbed huge attention from the scientific fraternity due to their strong light absorption over a broad spectrum and fast carrier transport at the heterointerface. However, none of the existing review articles have addressed the significant contribution of MoS2/Si heterostructures in the field of photo- detectors. Therefore, in this article, we are highlighting the recent advances, prospects, and challenges of MoS2/ Si heterostructure-based photodetectors for bridging the existing gap. This paper provides a comprehensive analysis of the latest advancements on MoS2/Si heterostructures-based devices, with a specific focus on photo- detectors. The carrier dynamics at the MoS2/Si heterointerface and the strategies for improving the performance of devices for developing efficient photodetectors are also highlighted in this report. Finally, we presented a perspective on future opportunities and current challenges for designing mixed-dimensional heterostructuresbased photodetectors.