Dual-mode reconfigurable dopingless transistor: A novel device structure

A novel device structure is proposed in this paper that can function as an Extruded Base- Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of approximate to 1000 times along with a cut-off frequency boost of approximate to 10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET's suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.