Progress and challenges of AIS quantum dots and derivatives for display applications: From synthesis to QLEDs

被引：0

作者：

Huang, Mengjin ^{[1
]}

Cai, Xiaoyue ^{[1
]}

Shan, Qingsong ^{[1
]}

Yang, Linxiang ^{[1
]}

Hu, Tianjun ^{[1
]}

Wang, Yaozheng ^{[1
]}

Chen, Xiang ^{[1
]}

Zeng, Haibo ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Engn Res Ctr Quantum Dot Display, Sch Mat Sci & Engn,MIIT Key Lab Adv Display Mat &, Nanjing 210094, Jiangsu, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2025年 / 281卷

关键词：

Ag-In-S; Quantum dots; Synthesis strategies; Composition engineering; Surface engineering; QLED; LIGHT-EMITTING-DIODES; TERNARY AGINS2; HOT-INJECTION; PHOTOLUMINESCENCE; NANOCRYSTALS; BANDGAP; EFFICIENT; ZN;

D O I：

10.1016/j.jlumin.2025.121136

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Semiconductor quantum dots have shown great potential in display applications due to their excellent optoelectronic properties, especially QLED displays with wide color gamut, high efficiency, flexibility, and smartness. However, the limited available efficient, narrow-luminescent, and environmentally friendly quantum dot systems remain a significant obstacle to quantum dots for display applications. Ag-In-S (AIS) quantum dots and derivatives are highly promising eco-friendly candidates due to their low toxicity and fully spectrally tunable bandedge emission. Here, we summarized the optoelectronic properties, synthesis strategies, narrow-emission strategies, and QLED optimization of AIS quantum dots and derivatives. Finally, we provide an outlook on future research of AIS quantum dots in QLED display technology, emphasizing the importance of further improving their color purity and device efficiency to drive breakthroughs in commercial applications.

引用

页数：15

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