Mechanical Behavior of SnAgCu as an Electronic Packaging Solder and Its Comparison with Pure SnMechanical Behavior of SnAgCu as an Electronic Packaging Solder and Its Comparison with Pure SnLiu, Zhou, Kong, Y. W. Li, Xing, Pang, Wu, Ma, and P. Li

被引:0
|
作者
X. Liu [1 ]
T. H. Zhou [1 ]
L. W. Kong [1 ]
Y. W. Li [1 ]
Z. B. Xing [1 ]
L. Pang [1 ]
W. B. Wu [1 ]
K. Y. Ma [1 ]
P. Li [1 ]
机构
[1] Yanshan University,Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology
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D O I
10.1007/s11837-025-07202-8
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学科分类号
摘要
This paper investigates the fundamental tensile behaviors of pure Sn and its alloys. Tensile experiments were conducted at various strain rates to deeply analyze and summarize the typical slip morphologies and fracture mechanisms at each rate. The results show that both the tensile strength and elongation of the two alloys increase progressively with the strain rate. In pure Sn, the surface is primarily characterized by vein-like slip bands, and the proportion of these slip bands increases as the strain rate rises. Labyrinth-like slip bands also appear in [001] oriented grains at a strain rate of 5 × 10−4/s, resembling the labyrinth structure found in fatigued dislocation configurations. These structures do not hinder the subsequent activation of dislocations, leading to a synchronous improvement of both strength and plasticity. In the Sn-3.0Ag-0.5Cu alloys, β-Sn dendrites are preferentially deformed, with conventional slip bands dominating within the dendrites, and the dendrites become more easily elongated as they approach the fracture. Their interaction with the eutectic phase results in two distinct fracture morphologies: one similar to pure Sn stretching and the other involving cracking through both the β-Sn dendrites and the matrix phase.
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页码:3482 / 3492
页数:10
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  • [1] Mechanical Behavior of SnAgCu as an Electronic Packaging Solder and Its Comparison with Pure Sn
    Liu, X.
    Zhou, T. H.
    Kong, L. W.
    Li, Y. W.
    Xing, Z. B.
    Pang, L.
    Wu, W. B.
    Ma, K. Y.
    Li, P.
    JOM, 2025,