Electronic structure and coexisting topological states in ferromagnetic and antiferromagnetic phases of MnBi2Te4 quantum wires

被引：0

作者：

Li, Jian ^{[1
,2
,3
]}

Yin, Zhu-Cai ^{[1
,2
]}

Li, Qing-Xu ^{[1
,2
]}

Zhu, Jia-Ji ^{[1
,2
,3
]}

机构：

[1] Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400065, Peoples R China

[2] Chongqing Univ Posts & Telecommun, Inst Adv Sci, Chongqing 400065, Peoples R China

[3] Chongqing Univ, Southwest Ctr Theoret Phys, Chongqing 401331, Peoples R China

来源：

CHINESE PHYSICS B | 2025年 / 34卷 / 03期

关键词：

quantum wires; MnBi2Te4; magnetic topological insulator; electronic structure; TRANSISTORS;

D O I：

10.1088/1674-1056/ada551

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We theoretically investigate the electronic structure of cylindrical magnetic topological insulator quantum wires in MnBi2Te4. Our study reveals the emergence of topological surface states in the ferromagnetic phase, characterized by spin-polarized subbands resulting from intrinsic magnetization. In the antiferromagnetic phase, we identify the coexistence of three distinct types of topological states, encompassing both surface states and central states.

引用

页数：6

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