Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase

被引：0

作者：

Fraccaroli, Riccardo ^{[1
]}

Fregolent, Manuel ^{[1
]}

Boito, Mirco ^{[1
]}

De Santi, Carlo ^{[1
]}

Canato, Eleonora ^{[2
]}

Rossetto, Isabella ^{[2
]}

Castagna, Maria Eloisa ^{[3
]}

Miccoli, Cristina ^{[3
]}

Russo, Alfio ^{[3
]}

Iucolano, Ferdinando ^{[3
]}

Pirani, Alessio ^{[4
]}

Pizzo, Giansalvo ^{[4
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Meneghini, Matteo ^{[1
,5
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, PD, Italy

[2] STMicroelectronics, I-20864 Agrate Brianza, MB, Italy

[3] STMicroelectronics, I-95121 Catania, CT, Italy

[4] STMicroelectronics, I-20007 Cornaredo, MI, Italy

[5] Univ Padua, Dept Phys & Astron, I-35131 Padua, PD, Italy

来源：

MICROELECTRONICS RELIABILITY | 2025年 / 168卷

关键词：

Off state stress; Weibull distribution; Dielectric breakdown; Electroluminescence;

D O I：

10.1016/j.microrel.2025.115649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the existence of two different degradation mechanisms for 100 V GaN transistors submitted to off-state stress. When the devices are stressed in strong pinch-off conditions, a high electric field falls on the dielectric between the source field plate and the channel, and a time dependent dielectric breakdown is observed. On the other hand, for weaker pinch-off, hot electrons trapping at the passivation surface can lower the electric field, leading to longer TTF. A second degradation mode is also observed, consisting in the gradual increase in off-state current, ascribed to positive charge trapping at defects spots.

引用

页数：4

共 7 条

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