On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces

Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has profoundly reshaped the modern life with a wide range of applications. In recent decades, semiconductor technology has rapidly evolved from first-generation narrow bandgap materials (Si, Ge) to the latest fourth-generation ultra-wide bandgap semiconductor (GaO, diamond, AlN) with enhanced performance to meet growing demands. Additionally, merging semiconductor devices with other techniques, such as computer assisted design, state-of-the-art micro/nano fabrications, novel epitaxial growth, have significantly accelerated the development of semiconductor optoelectronics devices. Among them, integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response, providing access to previously inaccessible degrees of freedom. We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces, including semiconductor lasers, semiconductor light emitting devices, semiconductor photodetectors, and low dimensional semiconductors. The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices, while also providing a practical platform for implementing cutting- edge metasurface technology in real-world applications.