Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

The BaBi2Nb2O9 (BBN) ceramic, calcined at a temperature of 750 degrees C-950 degrees C, was fabricated using conventional solid-state reaction method. The higher the calcination temperature, the lower intermediate phases in the raw powders. After the sintering process, a single BBN phase without intermediate phases is formed in all ceramic specimens. However, structural changes such as grain size and XRD peak shift of the (115) plane appear depending on the calcination temperature. The structural and electrical properties of the ceramics calcined at 950 degrees C shows the largest average grain size and lower dielectric breakdown strength (BDS) value. On the other hand, the ceramics calcined at 750 degrees C shows the smallest grain size and high dielectric BDS value. This suggests that BBN ceramics calcined at 750 degrees C have the most beneficial properties as an energy storage device.