Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs

被引：0

作者：

Horii, Kohei ^{[1
,2
]}

Hata, Katsuhiro ^{[1
,3
]}

Hayashi, Shin-Ichiro ^{[4
,5
]}

Wada, Keiji ^{[4
]}

Omura, Ichiro ^{[6
]}

Takamiya, Makoto ^{[1
]}

机构：

[1] Univ Tokyo, Tokyo 1538505, Japan

[2] Toshiba Co Ltd, Kanagawa 2128582, Japan

[3] Shibaura Inst Technol, Tokyo 1358548, Japan

[4] Tokyo Metropolitan Univ, Tokyo 1910065, Japan

[5] Chiba Inst Technol, Chiba 2750016, Japan

[6] Kyushu Inst Technol, Fukuoka 8080196, Japan

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2025年 / 40卷 / 01期

关键词：

Silicon carbide; MOSFET; Logic gates; Gate drivers; Circuits; Silicon; Costs; Drain current; gate driver; parallel; SiC mosfet;

D O I：

10.1109/TPEL.2024.3462535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-input, dual-output digital gate driver (DGD) IC is proposed, to solve the device characteristic variation problem and the parasitic inductance variation problem on PCBs in two parallel-connected SiC mosfets. This article is the first in the world to achieve all of 1) fully integrated two sensor output processing circuits, two DGDs and a controller required to detect and equalize the drain current variation of two parallel-connected SiC mosfets on a gate driver IC, 2) equalization of dc and surge components of drain current of each mosfet in a closed loop, and 3) demonstration measurements of drain current equalization under a total of four conditions, with and without SiC mosfet characteristic variations and with and without parasitic inductance variations.

引用

页码：467 / 485

页数：19

共 3 条

[1] Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC
Horii, Kohei
Morikawa, Ryuzo
Katada, Ryunosuke
Hata, Katsuhiro
Sakurai, Takayasu
Hayashi, Shin-Ichiro
Wada, Keiji
Omura, Ichiro
Takamiya, Makoto
2022 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2022, : 1406 - 1412
[2] Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs
He, Yang
Wang, Xun
Shao, Shuai
Zhang, Junming
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (05) : 6116 - 6127
[3] Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs
Horii, Kohei
Hata, Katsuhiro
Wang, Ruizhi
Saito, Wataru
Takamiya, Makoto
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 293 - 296

← 1 →