CMOS-integrated near-field sensor for terahertz dielectric spectroscopy

被引:0
|
作者
Chernyadiev, Alexander, V [1 ]
But, Dmytro B. [1 ]
Kolacinski, Cezary [1 ,2 ]
Ikamas, Kestutis [3 ,4 ]
Knap, Wojciech [1 ]
Lisauskas, Alvydas [3 ]
机构
[1] Inst High Pressure Phys PAS, CENTERA Labs, Warsaw, Poland
[2] Lukasiewicz Res Network, Inst Microelect & Photon, Warsaw, Poland
[3] Vilnius Univ, Inst Appl Electrodynam & Telecommun, Vilnius, Lithuania
[4] Mil Acad Lithuania, Gen Jonas Zemaitis, Vilnius, Lithuania
关键词
CMOS; dielectric spectroscopy; ethanol; near-field sensor; silicon technologies; TeraFET; THz; glucose; aqueous solutions;
D O I
10.23919/MIKON60251.2024.10633973
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, we present an electronic near-field sensor designed in 180 nm complementary metal-oxide-semiconductor (CMOS) technology, specifically tailored for terahertz dielectric spectroscopy. Our sensor utilizes a unique on-chip detection mechanism, which allows to probe the dielectric properties of materials in aqueous solutions. We have achieved superior sensitivity values, positioning our sensor at the forefront of terahertz-related techniques.
引用
收藏
页码:31 / 33
页数:3
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