Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

被引：0

作者：

Li, Zihan ^{[1
,2
]}

Qiu, Zheru ^{[1
,2
]}

Wang, Rui Ning ^{[3
]}

Ji, Xinru ^{[1
,2
]}

Divall, Marta ^{[1
,2
]}

Siddharth, Anat ^{[1
,2
]}

Kippenberg, Tobias J. ^{[1
,2
]}

机构：

[1] Swiss Fed Inst Technol Lausanne EPFL, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland

[3] Luxtelligence SA, CH-1015 Lausanne, Switzerland

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO2) films deposited using SiCl4 and O-2 as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300 degrees C, essential for next generation photonic integrated circuits. (c) 2023 The Author(s)

引用

页数：3

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