A 10μA PTAT current reference with improved supply voltage sensitivity in 22nm CMOS

In this paper, we propose a Proportional to Absolute Temperature (PTAT) current reference circuit with improved supply voltage sensitivity. The design has been fabricated using advanced Global Foundries 22nm CMOS fully-depleted silicon-on-insulator (FDSOI) technology with a back-gate voltage manipulating feature and it occupies a chip area of 0.013 mm(2). At room temperature, the circuit can generate a reference current of 10 mu A with a supply voltage of 1.5 V and introduces a trimming approach to reduce process variation. It consumes 30 mu W and follows PTAT characteristics in a wide temperature range from 10 degrees to 110 degrees C. The proposed circuit has a supply voltage sensitivity of 1.5%, making it a promising solution for applications requiring stable reference current.