The Impact of 60Co γ -Ray Irradiation on the Linearity of Conductance Update and the Learning Precision of Al:HfOx/TiOx Heterojunction Memristive Synapses

被引：0

作者：

Ma, Chuan ^{[1
]}

Yan, Jiaqi ^{[1
]}

Song, Hongjia ^{[1
]}

Wu, Binghan ^{[1
]}

Guo, Jiayue ^{[1
]}

Zhong, Xiangli ^{[1
]}

Wang, Jinbin ^{[1
]}

Guo, Hongxia ^{[2
]}

机构：

[1] Xiangtan University, School of Materials Science and Engineering, Xiangtan,411100, China

[2] Northwest Institute of Nuclear Technology, State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an,710024, China

来源：

IEEE Transactions on Nuclear Science | 2025年 / 72卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Heterojunctions - Irradiation - Memristors - Photons - Radiation effects - Semiconductor doping - Supersaturation;

D O I：

10.1109/TNS.2025.3539301

中图分类号：

学科分类号：

摘要：

Good linearity and radiation resistance of conductance updates in memristive synapses are crucial for their use in neuromorphic computing chips in space. Here, the Au/Al:Hfx/Tix/Ti memristive synapses with good linearity are prepared. The effects of irradiation on the memristive performances are studied through 60Co γ -ray irradiation experiments. The effect of irradiation on the image recognition accuracy of the neural network based on the memristive synapse crossbar array is predicted. The results show that the devices maintained good conductance update linearity under irradiation. When the 60Co γ -ray irradiation reaches 1 Mrad(Si), the nonlinearity (NL) of conductance update only increases from 0.096 to 0.163, and the image recognition accuracy of the memristor neural network decreases by about 2% (from 91% to 89%). The initial value of oxygen defect content in Hfx resistive materials after Al doping modification is relatively high (36%), which can explain why irradiation has little effect on conductance update linearity and recognition accuracy. These results suggest that the Au/Al:Hfx/Tix/Ti memristors show good radiation resistance under 60Co γ -ray irradiation, which makes them promising candidates for artificial synapses in space applications. © 2025 IEEE.

引用

页码：866 / 874

共 3 条

[1] Effect of Proton Irradiation Fluence on the Linearity and Symmetry of Conductance Tuning of a HfOx/TiOx Heterojunction-Based Memristor
Yan, Jiaqi
Song, Hongjia
Zhong, Xiangli
Wang, Jinbin
Guo, Hongxia
Ouyang, Xiaoping
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (05) : 807 - 814
[2] 60CO γ-ray irradiation effects on the capacitance and conductance characteristics of tin oxide films on Si
Selcuk, A. Birkan
Ocak, S. Bilge
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 577 (03): : 719 - 723
[3] On the interface states and series resistance profiles of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation
Demirezen, S.
Altndal, S.
Ozcelik, S.
Ozbay, E.
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2010, 165 (12): : 920 - 929

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