CVD-prepared PbSe films for mid-IR photodetectors with high detectivity

被引：0
|
作者：
Slapovskaya, Ekaterina [1 ]
Mochalov, Leonid [1 ,2 ]
Kudryashov, Mikhail [1 ,2 ]
Rafailov, Edik [3 ]
机构：
[1] Lobachevsky Univ, Gagarin Av 23, Nizhnii Novgorod 603950, Russia
[2] UNCC, 9201 Univ City Blvd, Charlotte, NC 28223 USA
[3] Aston Univ, Aston St, Birmingham B4 7ET, W Midlands, England
来源：
2024 24TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, ICTON 2024 | 2024年
关键词：
PbSe; CVD; photodetector; MIR; sensibilization; SE-TE FILMS; OPTICAL-PROPERTIES; PLASMA; SILICON; GLASSES;
D O I：
10.1109/ICTON62926.2024.10648010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to obtain the layers of lead selenide, in this work we used the Chemical Vapor Deposition (CVD) method, implemented on a setup for the synthesis of chalcogenide structures, which we described in detail in [15]. Elementary high-purity lead (5N) and selenium (5N) were used as the starting materials, and high-purity argon was used as a carrier gas. Sensibilization of the resulting films was carried out in two stages: annealing in air and then iodination. The influence of annealing conditions in air and iodination on the surface morphology and photoelectric properties of the final films was studied.
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页数：4
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