Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor

In this paper, the electrical properties of the 600-V and 800-V super-junction (SJ) vertical double-diffused metal- oxide-semiconductor (VDMOS) with a non-vertical trench were examined thoroughly. The analytical model containing the trench angle was developed for SJ VDMOS with the full depletion (FD) working mode, confirmed by the experimental results and TCAD simulations. For the devices with the non-full depletion (NFD) working mode, impacts of trench angle on the electrical properties were studied by TCAD simulations. It is found that, for SJ VDMOSs with both FD mode and NFD mode, the trench angle of 89.8 degrees accounts for the best device performance. Compared with the SJ VDMOS with the vertical trench, the device with the trench angle of 89.8 degrees has 25 % lower minimum on-resistance and 100 % larger processing window.