Intrinsic second-order topological insulators in two-dimensional polymorphic graphyne with sublattice approximation

被引:0
|
作者
Chen, Zhongjia [1 ,2 ]
Xu, Shaogang [3 ,4 ]
Xie, Zijuan [5 ]
Xu, Hu [3 ,4 ]
Weng, Hongming [1 ,2 ]
机构
[1] Songshan Lake Mat Lab, Dongguan 523000, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[3] Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Dept Phys, Shenzhen 518055, Peoples R China
[4] Quantum Sci Ctr Guangdong, Hong Kong Macao Greater Bay Area Guangdong, Hong Kong 518045, Peoples R China
[5] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
基金
中国国家自然科学基金;
关键词
WANNIER90; TOOL;
D O I
10.1038/s41535-024-00710-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In two dimensions, intrinsic second-order topological insulators (SOTIs) are characterized by topological corner states that emerge at the intersections of distinct edges with reversed mass signs, enforced by spatial symmetries. Here, we present a comprehensive investigation within the class BDI to clarify the symmetry conditions ensuring the presence of intrinsic SOTIs in two dimensions. We reveal that the (anti-)commutation relationship between spatial symmetries and chiral symmetry is a reliable indicator of intrinsic corner states. Through first-principles calculations, we identify several ideal candidates within carbon-based polymorphic graphyne structures for realizing intrinsic SOTIs under sublattice approximation. Furthermore, we show that the corner states in these materials persist even in the absence of sublattice approximation. Our findings not only deepen the understanding of higher-order topological phases but also open new pathways for realizing topological corner states that are readily observable.
引用
收藏
页数:7
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