A review of SRAM-based compute-in-memory circuits

被引:0
|
作者
Yoshioka, Kentaro [1 ]
Ando, Shimpei [1 ]
Miyagi, Satomi [1 ]
Chen, Yung-Chin [1 ]
Zhang, Wenlun [1 ]
机构
[1] Keio Univ, Dept Elect & Elect Engn, Yagami Campus,3-14-1 Hiyoshi,Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
关键词
compute in memory; analog compute in memory; digital compute in memory;
D O I
10.35848/1347-4065/ad93e0
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents a tutorial and review of Static Random Access Memory-based compute-in-memory (CIM) circuits, with a focus on both digital CIM (DCIM) and analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational principles of CIM technology. The review compares DCIM and ACIM approaches, examining their respective advantages and challenges. DCIM offers high computational precision and process scaling benefits, while ACIM provides superior power and area efficiency, particularly for medium-precision applications. We analyze various ACIM implementations, including current-based, time-based, and charge-based approaches, with a detailed look at charge-based ACIMs. The paper also discusses emerging hybrid CIM architectures that combine DCIM and ACIM to leverage the strengths of both approaches.
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页数:13
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