Performance enhancement in the long-wavelength low-gain region of Ti: sapphire lasers by an efficient stimulated Raman scattering process
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Yuntao Bai
[1
,2
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Xin Ding
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Xin Ding
[1
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Guoxin Jiang
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Guoxin Jiang
[1
,2
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Peng Lei
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Peng Lei
[1
,2
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Ying Xie
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Ying Xie
[1
,2
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Jiangeng Du
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Jiangeng Du
[1
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Yang Sun
[1
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Liang Wu
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Liang Wu
[1
,2
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Guizhong Zhang
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Guizhong Zhang
[1
,2
]
Jianquan Yao
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Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Key Laboratory of Optoelectronic Information Technology (Ministry of Education),TianjinInstitute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
Jianquan Yao
[1
,2
]
机构:
[1] Institute of Laser and Opto-electronics,School of Precision Instrument and Optoelectronics Engineering,Tianjin University
[2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education),Tianjin
We demonstrated a method to improve the output performance of a Ti:sapphire laser in the long-wavelength lowgain region with an efficient stimulated Raman scattering process. By shifting the wavelength of the high-gain-band Ti:sapphire laser to the long-wavelength low-gain region, high-performance Stokes operation was achieved in the original long-wavelength low-gain region of the Ti:sapphire laser. With the fundamental wavelength tuning from 870to 930 nm, first-order Stokes output exceeding 2.5 W was obtained at 930–1000 nm, which was significantly higher than that directly generated by the Ti:sapphire laser, accompanied by better beam quality, shorter pulse duration and narrower linewidth. Under the pump power of 42.1 W, a maximum first-order Stokes power of 3.24 W was obtained at960 nm, with a conversion efficiency of 7.7%. Furthermore, self-mode-locked modulations of first-and second-order Stokes generation were observed in Ti:sapphire intracavity solid Raman lasers for the first time.
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Russian Acad Sci, Inst High Temp, High Energy Dens Res Ctr, Moscow 127412, RussiaRussian Acad Sci, Inst High Temp, High Energy Dens Res Ctr, Moscow 127412, Russia
Andreev, NE
Kalmykov, SY
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Russian Acad Sci, Inst High Temp, High Energy Dens Res Ctr, Moscow 127412, RussiaRussian Acad Sci, Inst High Temp, High Energy Dens Res Ctr, Moscow 127412, Russia