Operation mode-switchable photodetector with a pn junction local-floating gate

被引:0
|
作者
YURONG JIANG
ZHI WANG
WENQIAN XING
CHUANZHENG LIAO
XIAOHUI SONG
XUEPING LI
CONGXIN XIA
机构
[1] SchoolofPhysics,HenanKeyLaboratoryofAdvancedSemiconductor&FunctionalDeviceIntegration,HenanNormalUniversity
关键词
D O I
暂无
中图分类号
TN36 [半导体光电器件];
学科分类号
0803 ;
摘要
<正>The photodetectors are critical elements in state-of-the-art technology; however, it is still challenging to realize simultaneously high detectivity and responsivity for the fixed operation mode configuration. In this work, we propose a pn junction local-floating gate photodetector (PNLFG-PD) based on a two-dimensional p-WSe2∕n-MoS2heterojunction, where n-type MoS2is partly floated on the p-WSe2channel.
引用
收藏
页码:2989 / 2995
页数:7
相关论文
共 14 条
  • [1] Operation mode-switchable photodetector with a pn junction local-floating gate
    Jiang, Yurong
    Wang, Zhi
    Xing, Wenqian
    Ilao, Chuanzheng
    Song, Xiaohui
    Li, Xueping
    Ia, Congxin x
    PHOTONICS RESEARCH, 2024, 12 (12) : 2989 - 2995
  • [2] An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
    Rizzo, Marta
    Brucoli, Matteo
    Danzeca, Salvatore
    Masi, Alessandro
    Pineda, Alvaro
    Servera Mas, Bartomeu
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (08) : 1876 - 1883
  • [3] Complementary Floating Gate Transistors With Memristive Operation Mode
    Ziegler, Martin
    Guenther, Robert
    Kohlstedt, Hermann
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (02) : 186 - 189
  • [4] Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters
    Brucoli, M.
    Cesari, J.
    Danzeca, S.
    Brugger, M.
    Masi, A.
    Pineda, A.
    Dusseau, L.
    Wrobel, F.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) : 1620 - 1627
  • [5] Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
    Hu, X
    Simin, G
    Yang, J
    Khan, MA
    Gaska, R
    Shur, MS
    ELECTRONICS LETTERS, 2000, 36 (08) : 753 - 754
  • [6] Memristive operation mode of a site-controlled quantum dot floating gate transistor
    Maier, P.
    Hartmann, F.
    Mauder, T.
    Emmerling, M.
    Schneider, C.
    Kamp, M.
    Hoefling, S.
    Worschech, L.
    APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [7] New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device
    Chen, Yi-Yueh
    Lee, Feng-Ming
    Lin, Yu-Yu
    Lee, Chih-Hsiung
    Chen, Wei-Chen
    Shu, Che-Kai
    Lin, Su-Jien
    Chang, Shou-Yi
    Lu, Chih-Yuan
    MATERIALS, 2022, 15 (10)
  • [8] Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell
    Ziegler, M.
    Oberlaender, M.
    Schroeder, D.
    Krautschneider, W. H.
    Kohlstedt, H.
    APPLIED PHYSICS LETTERS, 2012, 101 (26)
  • [9] Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate
    Wang, Taifang
    Zong, Yuan
    Nela, Luca
    Matioli, Elison
    APPLIED PHYSICS LETTERS, 2022, 121 (05)
  • [10] New silicon carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN junction
    Kumar, M. Jagadesh
    Bahl, Harsh
    2006 ANNUAL IEEE INDIA CONFERENCE, 2006, : 260 - +