Grinding and Polishing Technology for Silicon Carbide Substrate: State-of-the-art and Prospective

被引：0
|
作者：
Luo Q. [1 ,3 ]
Chen J. [1 ]
Cheng Z. [1 ]
Lu J. [1 ,2 ]
机构：
[1] Institute of Manufacturing Engineering, Huaqiao University, Xiamen
[2] National & Local Joint Engineering Research Center for Intelligent Manufacturing Technology of Brittle Materials Products, Huaqiao University, Xiamen
[3] National Key Laboratory of High Performance Tools, Xiamen
来源：
Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences | 2024年 / 51卷 / 04期
基金：
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;
关键词：
chemical reaction grinding and polishing technology; mechanical grinding and polishing technology; multi-energy field assisted grinding; polishing technology; silicon carbide; surface roughness;
D O I：
10.16339/j.cnki.hdxbzkb.2024180
中图分类号：
学科分类号：
摘要：
The material characteristics of silicon carbide substrate,which are difficult to machine,coupled with its amplification effect of large-sized and ultra-thinned,pose a huge challenge to existing processing technologies. Consequently,the processing technology of high efficiency and high quality for silicon carbide substrate has become a current research focus. In this paper,the research progress of mechanical and chemical grinding and polishing technology for silicon carbide substrates is reviewed. The characteristics of various grinding and polishing technologies are compared. The challenge and development trend of grinding and polishing technologies of silicon carbide substrate is pointed out to provide new ideas and methods for high quality,high efficiency,and low-cost processing of large-size silicon carbide substrate. © 2024 Hunan University. All rights reserved.
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页码：140 / 152
页数：12
相关论文
共 91 条
  • [1] DONG Z C, CHENG H B., Study on removal mechanism and removal characters for SiC and fused silica by fixed abrasive diamond pellets, International Journal of Machine Tools and Manufacture, 85, pp. 1-13, (2014)
  • [2] YIN L, VANCOILLE E Y J, RAMESH K, Et al., Surface characterization of 6H-SiC(0001)substrates in indentation and abrasive machining[J], International Journal of Machine Tools and Manufacture, 44, 6, pp. 607-615, (2004)
  • [3] BEAUCAMP A, SIMON P, CHARLTON P, Et al., Brittle-ductile transition in shape adaptive grinding (SAG) of SiC aspheric optics[J], International Journal of Machine Tools and Manufacture, 115, pp. 29-37, (2017)
  • [4] ZHANG Q L, TO S, ZHAO Q L, Et al., Amorphization and C segregation based surface generation of reaction-bonded SiC/Si composites under micro-grinding[J], International Journal of Machine Tools and Manufacture, 95, pp. 78-81, (2015)
  • [5] CASADY J B, JOHNSON R W., Status of silicon carbide(SiC)as a wide-bandgap semiconductor for high-temperature applications: a review[J], Solid-State Electronics, 39, 10, pp. 1409-1422, (1996)
  • [6] YANG C T, SONG S L, YAN B H, Et al., Improving machining performance of wire electrochemical discharge machining by adding SiC abrasive to electrolyte[J], International Journal of Machine Tools and Manufacture, 46, 15, pp. 2044-2050, (2006)
  • [7] CAO J G, WU Y B, LU D, Et al., Material removal behavior in ultrasonic-assisted scratching of SiC ceramics with a single diamond tool[J], International Journal of Machine Tools and Manufacture, 79, pp. 49-61, (2014)
  • [8] GAO S, HUANG H, ZHU X L, Et al., Surface integrity and removal mechanism of silicon wafers in chemo-mechanical grinding using a newly developed soft abrasive grinding wheel, Materials Science in Semiconductor Processing, 63, pp. 97-106, (2017)
  • [9] YAN S, LIN B, CHEN J Y., Surface residual stress measurement of silicon carbide based on fast surface detection method, Diamond & Abrasives Engineering, 38, 6, pp. 80-85, (2018)
  • [10] AGARWAL S, RAO P V., Experimental investigation of surface/ subsurface damage formation and material removal mechanisms in SiC grinding[J], International Journal of Machine Tools and Manufacture, 48, 6, pp. 698-710, (2008)
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