A fully integrated temperature sensor with an inaccuracy of ±0.4 °C (3σ) from-55 to 150 °C

被引：0
|
作者：
Wang, Yanhu [1 ,2 ]
Li, JiaPeng [1 ]
Lu, Huaxiang [2 ,3 ]
Li, Wenchang [1 ,2 ]
Zhang, Tianyi [1 ]
Liu, Jian [4 ,5 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Artificial Intelligence & High Speed Circuits Lab, Beijing 100083, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[5] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 10083, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2024年 / 154卷
关键词：
Integrated temperature sensor; High accuracy; Asymmetric operational amplifier; Extended counting ADC; TO-DIGITAL CONVERTER; CMOS; -55-DEGREES-C;
D O I：
10.1016/j.mejo.2024.106463
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-accuracy fully integrated temperature sensor for a wide temperature range up to 150 degrees C is presented in this article. The sensing circuits with the asymmetric operational amplifier and bias current optimization is applied to eliminate the component mismatch error and enhance the accuracy. The asymmetric operational amplifier can remove the offset voltage avoiding the switching noise compared with the chopping method. An extended counting analog-to-digital convertor (ADC) is proposed as the readout interface due to its compact structure and high efficiency. An easily-achieved dynamic range improvement is devised. Benefited by the dynamic range improvement, the 14-bit ADC can achieve a resolution of 0.0156 degrees C. This temperature sensor is fabricated in a 0.18-mu m CMOS process, and it achieves an accuracy of +/- 0.4 degrees C (3 sigma) from -55 to 150 degrees C.
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页数：8
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