Field emission from the surface quantum well of silicon

被引：0

|

作者：

Microelectronics Center, Southeast University, Nanjing 210096, China ^{[1
]}

机构：

来源：

Appl Surf Sci | / 1卷 / 77-83期

关键词：

The project is supportedb y the National Natural Science Foundation of China (69476031 );

D O I：

暂无

中图分类号：

学科分类号：

摘要：

11

引用

收藏

相关论文

共 50 条

[1] Field emission from the surface quantum well of silicon
Huang, QA
APPLIED SURFACE SCIENCE, 1996, 93 (01) : 77 - 83
[2] Light emission from a silicon quantum well
Steigmeier, EF
Morf, R
Grutzmacher, D
Auderset, H
Delley, B
Wessicken, R
APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4165 - 4167
[3] Field emission from surface states of silicon
Huang, QA
Qin, M
Zhang, B
Sin, JKO
JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7589 - 7594
[4] FIELD-EMISSION FROM A SILICON SURFACE-POTENTIAL WELL THROUGH A THIN OXIDE
HUANG, QA
JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) : 6770 - 6774
[5] Field emission from a silicon surface-potential well based on an airy function approach
1600, American Inst of Physics, Woodbury, NY, USA (78):
[6] Role of surface states in field emission from silicon
Huang, QA
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 149 - 154
[7] Effects of surface oxides on field emission from silicon
Shaw, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04): : 1817 - 1824
[8] FIELD EMISSION FROM SILICON AND GERMANIUM - FIELD DESORPTION AND SURFACE MIGRATION
ALLEN, FG
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 87 - &
[9] FIELD-EMISSION FROM A SILICON SURFACE-POTENTIAL WELL BASED ON AN AIRY FUNCTION-APPROACH
HUANG, QA
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1254 - 1258
[10] FIELD EMISSION FROM SILICON
DASARO, LA
JOURNAL OF APPLIED PHYSICS, 1958, 29 (01) : 33 - 34

← 1 2 3 4 5 →