GaAs FET large-signal model for high power amplifier

被引:0
|
作者
Ma, J. [1 ]
Xiao, Q. [1 ]
Ooi, B.L. [1 ]
Zhou, X.D. [1 ]
Chew, S.T. [1 ]
机构
[1] Natl Univ of Singapore, Singapore, Singapore
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:642 / 645
相关论文
共 50 条
  • [1] A GAAS-FET MODEL FOR LARGE-SIGNAL APPLICATIONS
    PETERSON, DL
    PAVIO, AM
    KIM, B
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 276 - 281
  • [2] COMPUTER CALCULATION OF LARGE-SIGNAL GAAS-FET AMPLIFIER CHARACTERISTICS
    MATERKA, A
    KACPRZAK, T
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (02) : 129 - 135
  • [3] An improved large-Signal Model for varactor and GaAs FET diodes
    Gao, XB
    Liang, YP
    Liao, B
    1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III, 1997, : 729 - 732
  • [4] Large-Signal FET Models and a New AlGaN/GaN HFET Model for Power Amplifier Design
    Trew, R. J.
    Hou, D.
    Schimizzi, R.
    Goswami, A.
    Bilbro, G. L.
    2012 IEEE INTERNATIONAL CONFERENCE ON WIRELESS INFORMATION TECHNOLOGY AND SYSTEMS (ICWITS), 2012,
  • [5] Accurate large-signal FET model tailored for switching-mode power amplifier design
    Liu, Lin-Sheng
    Ma, Jian-Guo
    Ng, Geok-Ing
    IEICE ELECTRONICS EXPRESS, 2010, 7 (22): : 1672 - 1678
  • [6] A large-signal model of GaNHEMTs for linear high power amplifier design
    Mengistu, Endalkachew S.
    Kompa, Guenter
    2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 292 - +
  • [7] A Large-Signal Graphene FET Model
    Habibpour, Omid
    Vukusic, Josip
    Stake, Jan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 968 - 975
  • [8] Automatic large-signal GaAs HEMT modeling for power amplifier design
    Popov, Artyom
    Bilevich, Dmitry
    Salnikov, Andrei
    Dobush, Igor
    Goryainov, Aleksandr
    Kalentyev, Alexey
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2019, 100 : 138 - 143
  • [9] LARGE-SIGNAL CRITERIA FOR THE DESIGN OF GaAs FET DISTRIBUTED POWER AMPLIFIERS.
    Ladbrooke, P.H.
    1745, (ED-32):
  • [10] GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS
    TAJIMA, Y
    WRONA, B
    MISHIMA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 171 - 175