Electromigration in two level interconnects of Cu and Al alloys

被引：2
|
作者：
机构：
来源：
Materials Chemistry and Physics | 1995年 / 41卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Electromigration reliability comparison of Cu and Al interconnects
    Alam, SM
    Wei, FL
    Gan, CL
    Thompson, CV
    Troxel, DE
    6TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, 2005, : 303 - 308
  • [2] ELECTROMIGRATION IN 2-LEVEL INTERCONNECTS OF CU-ALLOY AND AL-ALLOY
    HU, CK
    LUTHER, B
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 41 (01) : 1 - 7
  • [3] Diffusion and electromigration of Cu in single crystal Al interconnects
    Srikar, VT
    Thompson, CV
    MATERIALS RELIABILITY IN MICROELECTRONICS VIII, 1998, 516 : 71 - 75
  • [4] Chip-level electromigration reliability for Cu interconnects
    Gall, M
    Oh, C
    Haznedar, H
    Grinshpon, A
    Zolotov, V
    Ku, P
    Panda, R
    Demircan, E
    Müller, J
    Justison, P
    Ramakrishna, K
    Thrasher, S
    Hernandez, R
    Herrick, M
    Fox, R
    Boeck, B
    Kawasaki, H
    STRESS-INDUCED PHENOMENA IN METALLIZATION, 2004, 741 : 73 - 84
  • [5] Effects of Al doping on the electromigration performance of damascene Cu interconnects
    Yokogawa, Shinji
    Tsuchiya, Hideaki
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [6] Numerical Modeling of Electromigration in Al(0.25 at. % Cu) Interconnects
    Gordineer, James
    Wang, Ping-Chuan
    TMS 2024 153RD ANNUAL MEETING & EXHIBITION: SUPPLEMENTAL PROCEEDINGS, 2024, : 1169 - 1180
  • [7] Effects of texture and grain structure on electromigration lifetime of Al−Cu interconnects
    Young Bae Park
    Duk Won Lee
    Metals and Materials International, 2001, 7 : 303 - 310
  • [8] Crystallographic study of electromigration failure sites in submicron Al(Cu) interconnects
    Chu, X
    Prybyla, JA
    Theiss, SK
    Marcus, MA
    APPLIED PHYSICS LETTERS, 1999, 75 (24) : 3790 - 3792
  • [9] Electromigration drift velocity in Cu interconnects modeled with the level set method
    Nathan, M
    Glickman, E
    Khenner, M
    Averbuch, A
    Israeli, M
    APPLIED PHYSICS LETTERS, 2000, 77 (21) : 3355 - 3357
  • [10] Electromigration-induced Cu motion and precipitation in bamboo Al-Cu interconnects
    Witt, C
    Volkert, CA
    Arzt, E
    ACTA MATERIALIA, 2003, 51 (01) : 49 - 60
12345