Interfacet mass transport and facet evolution in selective epitaxial growth by Si by gas source molecular beam epitaxy

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 3卷 / 2381期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy
    Xiang, Q
    Li, SZ
    Wang, DW
    Wang, KL
    Couillard, JG
    Craighead, HG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2381 - 2386
  • [2] Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
    Kim, ES
    Usami, N
    Shiraki, Y
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 257 - 265
  • [3] Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy
    U'Ren, GD
    Goorsky, MS
    Wang, KL
    THIN SOLID FILMS, 2000, 365 (01) : 147 - 150
  • [4] Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy
    Misawa, Shunji
    Okumura, Hajime
    Sakuma, Eiichiro
    Yoshida, Sadafumi
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1992, 56 (01): : 105 - 113
  • [5] In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy
    Joyce, BA
    Zhang, J
    Taylor, AG
    Xie, MH
    Fernandez, JM
    Lees, AK
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1997, 7 (05): : 215 - 224
  • [6] Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
    Nikishin, SA
    Faleev, NN
    Zubrilov, AS
    Antipov, VG
    Temkin, H
    APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3028 - 3030
  • [7] LIMITING CONDITIONS OF SI SELECTIVE EPITAXIAL-GROWTH IN SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY
    AKETAGAWA, K
    TATSUMI, T
    SAKAI, J
    APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1735 - 1736
  • [8] Heterointerface control and epitaxial growth of 3C-SiC on Si by gas source molecular beam epitaxy
    Fuyuki, T
    Hatayama, T
    Matsunami, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (01): : 359 - 378
  • [9] Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane
    Nishimori, T.
    Sakamoto, H.
    Takakuwa, Y.
    Kono, Sh.
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (10 A):
  • [10] Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy
    Morishima, S
    Maruyama, T
    Akimoto, K
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 378 - 381
12345