Charge pumping measurement for determining band-to-band-tunneling induced interface damage during erasing operation of FLASH memory

被引：0
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作者：
Su, Y. [1 ]
Zhu, J. [1 ]
Chen, Y.C. [1 ]
Pan, L.Y. [1 ]
Liu, Z.H. [1 ]
机构：
[1] Inst. of Microelectron., Tsinghua Univ., Beijing 100084, China
来源：
| 2001年 / Science Press卷 / 22期
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