GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3

被引：0
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作者：
Grandjean, N. [1 ]
Massies, J. [1 ]
机构：
[1] Ctr. Rech. Sur L 'Hetero-Epitaxie S., Ctr. Natl. Rech. Sci., R. Bernard G., Valbonne, France
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：323 / 326
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