High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition

被引：0
|
作者：
Chen, C.-P.
Chang, Y.A.
Huang, J.-W.
Kuech, T.F.
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 64期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] HIGH SCHOTTKY-BARRIER HEIGHT OF THE AL-N-GAAS DIODES ACHIEVED BY SPUTTER-DEPOSITION
    CHEN, CP
    CHANG, YA
    HUANG, JW
    KUECH, TF
    APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1413 - 1415
  • [2] On the enhancement of effective barrier height in Ti/n-GaAs Schottky barrier diodes
    Arulkumaran, S
    Arokiaraj, J
    Dharmarasu, N
    Kumar, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 119 (04): : 519 - 522
  • [3] Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes
    Hübers, HW
    Röser, HP
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5326 - 5330
  • [4] The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures
    Tataroglu, A.
    Altindal, S.
    Pur, F. Z.
    Ataseven, T.
    Sezgin, S.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (3-4): : 438 - 442
  • [5] The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
    Leroy, WP
    Opsomer, K
    Forment, S
    Van Meirhaeghe, RL
    SOLID-STATE ELECTRONICS, 2005, 49 (06) : 878 - 883
  • [6] NIAL/N-GAAS SCHOTTKY DIODES - BARRIER HEIGHT ENHANCEMENT BY HIGH-TEMPERATURE ANNEALING
    SANDS, T
    CHAN, WK
    CHANG, CC
    CHASE, EW
    KERAMIDAS, VG
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1338 - 1340
  • [7] Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
    Biber, M
    Temirci, C
    Türüt, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 10 - 13
  • [8] High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling
    Lalinsky, T
    Osvald, J
    Machajdik, D
    Mozolova, Z
    Sisolak, J
    Constantinidis, G
    Kobzev, AP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 657 - 661
  • [9] High-temperature stable Ir-Al/n-GaAs Schottky diodes: effect of the barrier height controlling
    Slovak Acad of Sciences, Bratislava, Slovakia
    J Vac Sci Technol B, 2 (657-661):
  • [10] Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model
    Soylu, Murat
    Yakuphanoglu, Fahrettin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 506 (01) : 418 - 422
12345