Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. magnetron sputtering

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作者：
Korea Inst of Science and Technology, Seoul, Korea, Republic of [1 ]
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来源：
Integr Ferroelectr | / 1 -4 pt 1卷 / 419-428期
关键词：
Annealing - Crystal orientation - Dielectric properties of solids - Film growth - Grain growth - Grain size and shape - Particle size analysis - Sputter deposition - Strontium compounds - Thin films;
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摘要：
With increasing sputtering pressure and post-annealing temperature, uniform rodlike grains were obtained through bimodal grain size distribution. But, (00l) peaks of SrBi2Ta2O9 thin films were increased. Improvement of electrical properties is expected by removing the abnormal grain growth and c-axis oriented SrBi2Ta2O9.
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