Microwave transistor devices based on E-plane waveguide structures

被引：0
|
作者：
Starunskiy, A.V.
Shelamov, G.N.
机构：
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1988年 / 43卷 / 02期
关键词：
Transistors; Field Effect--Applications - Waveguides--Applications;
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学科分类号：
摘要：
The paper considers the main methods of connecting field-effect transistors in slotted-waveguide structures and describes the circuit design of such microwave devices as oscillators, mixers, amplifiers, detectors, and frequency converters. The frequency of transistor oscillators is stabilized using dielectric resonators. The characteristics of these devices in the 10-40 GHz band are presented.
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