Simple electrode-barrier structure using Ir for integration of PZT-based high-density nonvolatile memories

被引：0
|
作者：
Lee, Kwang B. [1 ,2 ]
Tirumala, S. [1 ]
Song, Y. [1 ]
Ryu, Sang O. [1 ]
Desu, Seshu B. [1 ]
机构：
[1] Department of Materials Science and Engineering, Virginia Tech., Blacksburg, VA 24061-0237, United States
[2] Dept. of Physics, Sangji Univ., Wonju, Kangwondo 220-702, Korea, Republic of
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 541卷
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页码：197 / 202
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