共 50 条
- [2] Synthesis of epitaxial 3C-SiC by C60 carbonization of silicon on sapphire FULLERENES AND CARBON BASED MATERIALS, 1998, 68 : 817 - 820
- [5] Carbonization process and SiC formation at C60/Si(111) interface studied by SRPES PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
- [7] SiC formation by C60 molecules as a precursor:: A synchrotron-radiation photoemission study of the carbonization process JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (01): : 70 - 73
- [9] Epitaxial Templating of C60 with a Molecular Monolayer JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2016, 7 (17): : 3487 - 3490
- [10] Formation of epitaxial beta-SiC layers by fullerene-carbonization of silicon(001): A comparison between the use of C-60 and C-70 molecules MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 291 - 294