Old answers to new problems

被引：0
|
作者：
Ridsdale, David
机构：
来源：
European Semiconductor | 2001年 / 23卷 / 02期
关键词：
Carbon inorganic compounds - Copper - Dielectric materials - Plasma enhanced chemical vapor deposition - Plasma etching - Silicon wafers;
D O I：
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中图分类号：
学科分类号：
摘要：
Effective etching while maintaining selectivity of layers was considered to be a major problem for semiconductor manufacturing of devices below 0.18 nm. A European company claimed to have developed a etching process from its earliest etch process as a solution to the problem. This process was said to provide upto ten times the plasma source density of other solutions.
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页码：40 / 41
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