The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes

Critical dimension and overlay errors caused by exposure tools, in double dipole dimension for the 65-nm and 45-nm technology nodes were investigated. Double dipole lithography was a perfect imaging solution for the 65-nm and45-nm technology nodes when ArF exposure tools were used. Small critical dimension can be resolved with a good process window by using off-axis lightening of the dipole. The results show that CD variation will be less than 3.5nm for 200-nm focus control and 2% for 45-nm node when 0.93 NA and 0.3/0. 9σin/σout settings are used and for 65-nm node technology OL errors are less than 3nm when using 0.75 NA and 0.45/0.89σin/σout.