Molecular beam epitaxy of SnSe2: Chemistry and electronic properties of interfaces

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机构：
[1] Shimada, Toshihiro
[2] Ohuchi, Fumio S.
[3] Koma, Atsushi
来源：
Shimada, Toshihiro | 1600年 / 32期
关键词：
Alumina - Band structure - Chemistry - Heterojunctions - Interfaces (materials) - Molecular beam epitaxy - Schottky barrier diodes - Semiconducting films - Substrates;
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摘要：
A layered material SnSe2 was grown epitaxially on various layered materials (MoS2, NbSe2, graphite), while reacting with Al2O3(0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.
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