RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN A ZERO-GAP SEMICONDUCTOR.

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作者：

D'yakonov, M.I.

Khaetskii, A.V.

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Soviet physics. Semiconductors | 1980年 / 14卷 / 08期

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摘要：

An analysis is made of the processes responsible for the recombination of nonequilibrium carriers in a zero-gap semiconductor, which are the Auger recombination and the recombination accompanied by optical phonon emission. The temperature and carrier-density dependences of the recombination times are determined. In the case of HgTe the recombination times are calculated and are found to lie within the range (1 minus 5) multiplied by 10** minus **1**3 sec and depend weakly on temperature and dopant concentration.

引用

页码：891 / 895

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