Impurity behavior during Si single crystal growth from the melt

被引：0
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作者：
Izumi, T.
Morita, H.
Fujiwara, T.
Fujiwara, H.
Inami, S.
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来源：
Materials Science Forum | 1995年 / 196-201卷 / pt 1期
关键词：
Czochralski method - Necking method - Growth orientations - Growth rate;
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页码：109 / 114
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