Thermodynamic study on metalorganic vapor-phase epitaxial growth of group III nitrides

被引：0
|
作者：
Tokyo Univ of Agriculture and, Technology, Tokyo, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 2 Letter | / 9 A-B卷 / L1136-L1138期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Thermodynamic study on metalorganic vapor-phase epitaxial growth of group III nitrides
    Koukitu, A
    Takahashi, N
    Seki, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1136 - L1138
  • [2] Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy
    Akasaki, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 248 - 251
  • [3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP/GAAS
    KNAUER, A
    ERBERT, G
    GRAMLICH, S
    OSTER, A
    RICHTER, E
    ZEIMER, U
    WEYERS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1655 - 1658
  • [4] METALORGANIC VAPOR-PHASE EPITAXIAL GROWN HETEROINTERFACES TO GAINP WITH GROUP-III AND GROUP-V EXCHANGE
    PROST, W
    SCHEFFER, F
    LIU, Q
    LINDNER, A
    LAKNER, H
    GYURO, I
    TEGUDE, FJ
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 538 - 543
  • [5] Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires
    Bhunia, S
    Kawamura, T
    Watanabe, Y
    Fujikawa, S
    Tokushima, K
    APPLIED PHYSICS LETTERS, 2003, 83 (16) : 3371 - 3373
  • [6] Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN
    Uchida, Takeshi
    Kusakabe, Kazuhide
    Ohkawa, Kazuhiro
    JOURNAL OF CRYSTAL GROWTH, 2007, 304 (01) : 133 - 140
  • [7] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
    YOSHINO, J
    IWAMOTO, T
    KUKIMOTO, H
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 74 - 78
  • [8] Thermodynamic study in GaN grown by metalorganic vapor-phase epitaxy
    Zhang, GY
    Tong, YZ
    Jin, SX
    Dang, XZ
    Yang, ZJ
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 394 - 397
  • [9] METALORGANIC CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF III-V COMPOUNDS IN A SINGLE REACTOR
    KONDO, S
    MATSUMOTO, S
    NAGAI, H
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 305 - 314
  • [10] Optimal design of reactors for metalorganic vapor phase epitaxy of group III nitrides
    Pawlowski, RP
    Theodoropoulos, C
    Mountziaris, TJ
    Moffat, HK
    Han, J
    Thrush, EJ
    NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION, 2000, 616 : 159 - 164
12345