Growth mechanism and effect of deposition rate on crystal orientation in PbTiO3 thin film by metallorganic chemical vapor deposition

被引:0
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作者
Xuan, Yi [1 ]
Kuroyanagi, Kazumasa [1 ]
Wakiya, Naoki [1 ]
Shinozaki, Kazuo [1 ]
Mizutani, Nobuyasu [1 ]
机构
[1] Tokyo Inst of Technology, Tokyo, Japan
关键词
Atomic force microscopy - Crystal lattices - Crystal orientation - Film preparation - Magnesia - Metallorganic chemical vapor deposition - Semiconducting lead compounds - Semiconductor growth - Surface roughness - X ray crystallography;
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摘要
Lead titanate thin films were prepared on cleaved MgO(100) substrate by cold wall horizontal metallorganic chemical vapor deposition (MOCVD). Crystal structure of films was examined by X-ray 2 θ/ω scan and X-ray pole-figure measurements. The growth mechanism of PbTiO3 thin film at the initial growth stage was characterized using an atomic force microscope (AFM). AFM results show that the growth mechanism of PbTiO3 thin film on MgO(100) substrate is in accordance with layer-by-layer plus islands of Stranski-Krastanov mode. Islands formed after two lattice layer with 0.8 nm PbTiO3 film deposition on a MgO(100) substrate. The crystal orientation and surface roughness are dependent on deposition rate. (001) and (100) oriented grain were found at higher deposition rate (>2.5 nm/min). On the other hand, (212) and (221) oriented triangular-shaped grain growth was observed at relatively lower deposition rate (<2.5 nm/min), which lead to an increase of surface roughness.
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页码:955 / 960
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