Kinetic theory of spin transport in n-type semiconductor quantum wells

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机构：
[1] [1,Weng, M.Q.
[2] 1,Wu, M.W.
来源：
Wu, M.W. (mwwu@ustc.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Crystal impurities - Diffusion - Electric field effects - Electron scattering - Electrons - Kinetic theory - Magnetic field effects - Semiconducting gallium arsenide;
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摘要：
The kinetic theory of spin transport in n-doped semiconductor quantum wells was discussed. A decoherence inhomogeneous broadning effect was also discussed which was based on interference effect of electrons/spins with different momentum along the direction of the diffusion. The analysis showed that the inhomogeneous broadning alone can cause spin decoherence even in the absence of scattering.
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