RADIATION DEFECTS IN ELECTRON-IRRADIATED CdSiAs2 AND ZnSiAs2 CRYSTALS.

Crystals of p-type CdSiAs//2 and ZnSiAs//2 were irradiated at T equals 300 K with E equals 2. 0-,MeV electrons, receiving doses of up to 1. 6 multiplied by 10**1**8 cm** minus **2. The electrical and optical properties of the samples were investigated. The electron irradiation resulted in compensation of the original conductivity and displacement of the Fermi level to the position E//G/2. The thermal stability of the defects was investigated in the temperature range 20-500 degree C. Annealing stages were found at 20-120, 120-300 and about 400 degree C for CdSiAs//2 and at 80-160, 160-340, and 340-420 degree C for ZnSiAs//2.