Passivation and etching of wafer surfaces in HF-H2O2-IPA solutions

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[1] Eom, Dae-Hong
[2] Kim, Ky-Sub
[3] Park, Jin-Goo
来源：
Park, J.-G. (jgpark@hanyang.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词：
Additives - Atomic force microscopy - Cleaning - Contamination - Copper - Etching - Hydrofluoric acid - Mass spectrometry - Particles (particulate matter) - Passivation - Rate constants - Wetting;
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