共 49 条
- [21] Impact of Gate Oxide Traps and In0:53Ga0:47As/BOX traps on the Performance of In0:53Ga0:47As on insulator TFET and its Mitigation 2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2019,
- [25] COMPARISON OF THE SATURATED CURRENT IN NORMAL AND INVERTED MODULATION-DOPED In0. 53Ga0. 47As/InP STRUCTURES. Electron device letters, 1985, EDL-6 (05): : 247 - 249
- [26] LPE GROWTH AND CHARACTERIZATION OF HIGH PURITY In0. 53Ga0. 47As. Technology Reports of the Osaka University, 1982, 32 (1652-1683): : 279 - 284
- [30] INTERFACE CHARACTERISTICS OF MIS DIODES MADE BY ANODIC OXIDATION OF In0. 53Ga0. 47As. Technology Reports of the Osaka University, 1984, 34 (1741-1758): : 41 - 46