Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma

被引：0

作者：

Gao, Dawei ^{[1
]}

Furukawa, Katsuhiko ^{[1
]}

Nakashima, Hiroshi ^{[1
]}

J., Gao

J., Wang

K., Muraoka

机构：

[1] Advanced Science and Technology Center for Cooperative Research, Kyushu University, Kasuga Fukuoka 816-8580, Japan

[2] Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga Fukuoka 816-8580, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 08期

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D O I：

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摘要：

引用

页码：4868 / 4871

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[1] Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma
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[2] Room temperature deposition of silicon oxynitride films with low stress using sputtering-type electron cyclotron resonance plasmas
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[3] Room temperature deposition of silicon oxynitride films with low stress using sputtering-type electron cyclotron resonance plasmas
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[5] Effects of oxygen content on properties of silicon oxide films prepared at room temperature by sputtering-type electron cyclotron resonance plasma
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[8] Deposition of high-quality silicon oxynitride film at low temperature by using a sputtering-type electron cyclotron resonance plasma
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[9] Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma
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