Inter-light-hole subband absorption in tensile strained InGaAs/InP quantum wells

被引:0
|
作者
Technion-Israel Inst of Technology, Haifa, Israel [1 ]
机构
来源
Superlattices Microstruct | / 1卷 / 61-67期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Inter-light-hole subband absorption in tensile strained InGaAs/InP quantum wells
    Ilouz, I
    OiknineSchlesinger, J
    Gershoni, D
    Ehrenfreund, E
    Ritter, D
    Hamm, RA
    Vandenberg, JM
    SUPERLATTICES AND MICROSTRUCTURES, 1996, 19 (01) : 61 - 67
  • [2] Enhanced excition absorption and saturation limit in strained InGaAs/InP quantum wells
    Jiang, Y.
    Teich, M.C.
    Wang, W.I.
    Journal of Applied Physics, 1992, 71 (02):
  • [3] ENHANCED EXCITON ABSORPTION AND SATURATION LIMIT IN STRAINED INGAAS/INP QUANTUM-WELLS
    JIANG, Y
    TEICH, MC
    WANG, WI
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 769 - 772
  • [4] Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells
    Micallef, J
    Borg, JL
    Shiu, WC
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 371 - 376
  • [5] OPTICAL NONLINEARITY DUE TO CARRIER SEPARATION IN TENSILE-STRAINED INGAAS/INP QUANTUM-WELLS
    KNORR, C
    GFRORER, O
    HARLE, V
    SCHOLZ, F
    HANGLEITER, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (11) : 1484 - 1488
  • [6] THEORY OF THE HOLE SUBBAND DISPERSION IN STRAINED AND UNSTRAINED QUANTUM-WELLS
    OREILLY, EP
    WITCHLOW, GP
    PHYSICAL REVIEW B, 1986, 34 (08): : 6030 - 6033
  • [7] Hole spin-relaxation in quantum wells from saturation of inter-subband absorption
    Kainz, J
    Schneider, P
    Ganichev, SD
    Rössler, U
    Wegscheider, W
    Weiss, D
    Prettl, W
    Bel'kov, VV
    Golub, LE
    Schuh, D
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (1-3): : 418 - 421
  • [8] InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)
    Z. N. Sokolova
    D. A. Vinokurov
    I. S. Tarasov
    N. A. Gun’ko
    G. G. Zegrya
    Semiconductors, 1999, 33 : 1007 - 1009
  • [9] Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells
    Lampin, JF
    Wallart, X
    Gouy, JP
    Mollot, F
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 24 (04) : 273 - 278
  • [10] Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells
    Attiaoui, Anis
    Assali, Simone
    Del-Vecchio, Patrick
    Nicolas, Jerome
    Moutanabbir, Oussama
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,